CVEvulnerability

CVE-2020-10255

9.0 CRITICAL Published 2020-03-10 Modified 2026-06-17 Official page ↗
Status
Modified
Published
2020-03-10
Last modified
2026-06-17
Assigner
[email protected]
CVSS 3.1 ([email protected])
9.0 CRITICAL — CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H
CVSS 2.0 ([email protected])
9.3 HIGH — AV:N/AC:M/Au:N/C:C/I:C/A:C
Weaknesses
CWE-20

Description

Modern DRAM chips (DDR4 and LPDDR4 after 2015) are affected by a vulnerability in deployment of internal mitigations against RowHammer attacks known as Target Row Refresh (TRR), aka the TRRespass issue. To exploit this vulnerability, the attacker needs to create certain access patterns to trigger bit flips on affected memory modules, aka a Many-sided RowHammer attack. This means that, even when chips advertised as RowHammer-free are used, attackers may still be able to conduct privilege-escalation attacks against the kernel, conduct privilege-escalation attacks against the Sudo binary, and achieve cross-tenant virtual-machine access by corrupting RSA keys. The issue affects chips produced by SK Hynix, Micron, and Samsung. NOTE: tracking DRAM supply-chain issues is not straightforward because a single product model from a single vendor may use DRAM chips from different manufacturers.

Affected configurations

• micron ddr4 sdram • micron lpddr4 • samsung ddr4 • samsung lpddr4 • skhynix ddr4 sdram • skhynix lpddr4

Related

Weakness · CWE (1)

  • CWE-20 Improper Input Validation weakness

References